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| *qSMAL-SIGNAL TRANSISTOR*r L 2SC5621 FOR HIGH FREE NCY AMPLIFY APPLICATION UQ SILICON NPN EPITAXIAL TYPE E SCRIPTION D 2SC5621 is a su per min i pacge er sin selea d silic o n NPN ak e pitliax trn asistor.It is de sign e d for high freu q n c y pplictio n . aa OUTLINE DR A WING 1.6 0.8 Unit :mm 0.4 0.4 FEATUE R * EHigh gain bandwidth pro du c t. fT=4.5GHz *EHigh gain ,lo w n o ise . ECan opete t lo w o ltge . * ar a v a *ESu pe r min i pacak ge for es a y mou n tin g. 1 3 2 APPLICATION For TV tu n e s,high freu q n c y m plifie ,c e lur a phon e r a r sy ste m . TER M INAL CONNECTOR : BASE : EMITTER EIJA: : COLLECTOR 1 2 3 MAXIMUM R A TINGS ( T= 25* Z) a Sy mbol VCBO VCEO VEBO IC PC Tj Tstg Pam e te r ar Colle c tor to Base o lta v Colle c tor to Emitte r o lta v Emitte r to Base o lta v Colle c tor c uer n t Colle c tor dissi Ju n c tio n te m Stora ge te m prtuer a patio n petuer ar ge ge ge Rtin a 20 12 3 50 100 +125 -55~+125 gs U n it V V V mA mW *Z *Z MARKING G TYPE NAME W hFE ITEM ELECTR ICAL CHAR A CTER ISTICS (T= 25* Z) a S y o m lb I I CBO EBO m aP r e t Colle c tor c u t off c uer n t Emitte r c u t off c uer n t DC ford c uer n t rw a Gain bandwidth 2 e Tt c s o i n d s VCB=10V, I E=0mA VEB=1V, IC=0mA gain pro du c t VCE=5V, I VCE=5V, I VCB=5V, I VCE=5V, I VCE=5V, I C=20mA E=20mA E=0mA, Mi n 50 L im s t Typ Ma x 1.0 1.0 250 4.5 1.0 U n it E E A A hFE fT Cob S21 NF Colle c tor ou t pu t c a pacitnac e powe r gain In setio n r Noise fi gu er f =1MHz f =1GHz 7.5 f =1GHz GHz pF dB dB C=20mA, C=5mA, 9.0 1.5 *qSMALL-SIGNAL TRANSISTOR*r 2 S C5 6 2 1 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 10 Ta=25 VCE=5 10 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT ...d|R N G~b^n` 10 10 1 Ta=25 VCE= 5 B COMMON EMITTER TRANSFER V 10 0.1 1 0.1 1 10 C 10 IC(mA) 0.1 0.1 0.5 COLLECTOR CURRENT I@ d ^ N R 0.6 0.7 BASE TO EMITTER VOLTAGE @d ^b~GEX[x 0.8 0.9 V 1 VBE(V) 10. VCE= 1.0 GAIN BANDWIDTH PRODUCT VS. COLLECTOR CURRENT |R N d|RN 20. 18.0 16.0 14.0 12.0 10. 8.0 6.0 4.0 2.0 Ta=25 VCE= 5 f=0.5G f=1.0G H H ^ POWER GAIN VS. COLLECTOR CURRENT Ta=25 5 0.1 0.1 RN^Ex[Xd RN^oe| 1.0 COLLECTOR CURRENT I@ d ^ N R 10 . C 0. IC(mA) 0.1 10. RN^d@I Gw|RN^d COLLECTOR CURRENT C IC(mA) 10. COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE E I =0mA f=1MHz Ta=25 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 NOISE FIGURE VS. COLLECTOR CURRENT V CE =5V f=1.0GHz Ta=25 1.0 0.1 0.1 RN^Ex[Xd@V 1 10 COLLECTOR TO BASE VOLTAGE (V) CB VCB(V) 10 0. 1 COLLECTOR CURRENT RN^d@I 10 C (mA) IC(mA) 10 *qSMAL-SIGNAL TRANSISTOR*r L 2SC5621 FOR HIGH FREE NCY AMPLIFY APPLICATION UQ SILICON NPN EPITAXIAL TYPE S PAR A METER 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 VCE=5V,IC=2mA FR EUENCY Q (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 0.399 0.375 0.364 0.348 0.341 0.332 0.329 0.327 0.325 0.321 0.318 0.320 0.322 0.324 0.324 0.323 -126.4 -137.6 -148.1 -156.9 -164.5 -171.8 -178.6 175.5 169.3 165.0 159.9 154.5 150.2 145.7 141.4 137.7 0.099 0.110 0.118 0.127 0.137 0.149 0.159 0.170 0.180 0.193 0.203 0.215 0.226 0.238 0.250 0.262 51.8 50.9 52.4 53.4 53.7 55.0 55.1 55.8 55.1 56.1 55.7 55.7 55.4 54.9 54.8 54.0 4.984 4.260 3.729 3.306 2.994 2.723 2.502 2.326 2.162 2.027 1.905 1.807 1.715 1.635 1.564 1.498 94.1 88.1 82.7 77.7 73.0 68.9 65.0 61.3 57.5 54.5 51.2 48.1 45.0 42.1 39.4 36.7 0.455 0.439 0.408 0.397 0.387 0.387 0.383 0.387 0.383 0.382 0.385 0.385 0.393 0.395 0.397 0.401 -45.8 -48.2 -48.4 -49.7 -52.0 -54.0 -55.2 -57.3 -59.7 -61.8 -63.7 -65.4 -67.6 -69.5 -71.7 -73.9 S11 MAG 0.506 0.480 0.453 0.434 0.421 0.408 0.398 0.391 0.388 0.381 0.377 0.379 0.380 0.377 0.380 0.379 ANG -106.9 -118.6 -130.6 -139.7 -148.4 -156.6 -164.1 -171.0 -177.9 176.7 171.4 165.0 160.0 154.6 149.2 145.1 S21 MAG 0.120 0.128 0.133 0.139 0.144 0.149 0.154 0.161 0.168 0.174 0.183 0.191 0.202 0.212 0.223 0.233 ANG 44.1 42.3 42.1 42.3 42.3 43.7 44.6 46.5 47.2 48.6 50.1 50.7 51.9 52.6 52.9 53.5 S12 MAG 4.062 3.503 3.115 2.767 2.519 2.316 2.129 1.992 1.857 1.744 1.643 1.562 1.481 1.416 1.357 1.294 ANG 100.4 94.0 87.7 82.0 76.7 71.9 67.4 63.1 58.9 55.4 51.8 48.3 44.9 41.9 39.0 36.0 S22 MAG ANG 0.593 -42.3 0.005 -46.3 0.004 -47.5 0.003 -49.2 0.003 -51.6 0.002 -54.1 0.002 -55.8 0.001 -58.2 0.001 -60.2 0.001 -62.4 0.001 -64.5 0.000 -66.6 0.000 -68.7 0.000 -70.5 0.000 -72.5 0.000 -75.0 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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